ELECTRICAL AND THERMOELECTRICAL PROPERTIES OF ZN3P2 FILMS GROWN BY THE HOT WALL EPITAXY TECHNIQUE

被引：13

作者：

BABU, VS ^{[1
]}

VAYA, PR ^{[1
]}

SOBHANADRI, J ^{[1
]}

机构：

[1] INDIAN INST TECHNOL,CTR SYST & DEVICES,MADRAS 600036,TAMIL NADU,INDIA

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 04期

关键词：

D O I：

10.1063/1.341744

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1922 / 1926

页数：5

共 16 条

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[8] GROWTH OF ZINC PHOSPHIDE THIN-FILMS BY HOT WALL EPITAXY [J].

MURALI, KR ;

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SOBHANADRI, J .

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JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1979, 40 (12) :1027-1033

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