DIRECT AND INDIRECT OPTICAL-TRANSITIONS IN ZN3P2

被引:84
作者
PAWLIKOWSKI, JM
MISIEWICZ, J
MIROWSKA, N
机构
[1] Institute of Physics, Wrocław Technical University, 50-370 Wrocław
关键词
D O I
10.1016/0022-3697(79)90134-3
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Absorption measurements were made on single crystals of Zn3P2 at temperatures of 300, 80 and 5 K, and photo-voltage spectral responses-were measured at 300 K for Au- and InZn3P2 contacts. Interband absorption was interpreted as a process involving three mechanisms: (1) indirect transitions from the valence band at the Γ point, (2) either excitations from acceptor level to the conduction band at the Γ point, or second indirect transitions associated with the creation of excitons, and (3) band-to-band direct transitions at the Γ point. The effect of the lighting configuration on spectral PV plots is also discussed, and the origin of two peaks of PV responses is interpreted as being in accordance with optical data. The indirect energy gap has been estimated as 1.315eV at 300 K and 1.335 eV at 80 and 5 K, and the direct one as 1.505, 1.645 and 1.685 eV at 300, 80 and 5 K, respectively. © 1979.
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页码:1027 / 1033
页数:7
相关论文
共 24 条
[1]   EPITAXIAL CDXHG1-XTE PHOTOVOLTAIC DETECTORS [J].
BECLA, P ;
PAWLIKOWSKI, JM .
INFRARED PHYSICS, 1976, 16 (04) :457-464
[2]  
BECLA P, 1979, OPTICA APPLICATA, V9
[3]  
CATALANO A, 1978, 1977 P INT C PHOT SO, P644
[4]  
Johnson E. J., 1967, SEMICONDUCTORS SEMIM, V3, P153
[5]   BAND STRUCTURE OF INDIUM ANTIMONIDE [J].
KANE, EO .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1957, 1 (04) :249-261
[6]  
KURBATOV LN, 1976, KVANTOVAYA ELEKTRON+, V3, P316
[7]   ENERGY BAND STRUCTURES OF CD3P2 AND ZN3P2 [J].
LINCHUNG, PJ .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1971, 47 (01) :33-&
[8]  
MISIEWICZ J, ACTA PHYS POL
[9]  
MISIEWICZ J, 1979, OPTICA APPLICATA, V9
[10]  
MOLLER A, 1979, 14 P INT C PHYS SEM