ELECTRICAL AND OPTICAL-PROPERTIES OF SINGLE-CRYSTAL IN2TE3 AND GA2TE3

被引：54

作者：

SEN, S

BOSE, DN

机构：

来源：

SOLID STATE COMMUNICATIONS | 1984年 / 50卷 / 01期

关键词：

D O I：

10.1016/0038-1098(84)90055-3

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：39 / 42

页数：4

共 8 条

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[3]

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ULMANIS, UA .

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[5]

Sen S., UNPUB

[6] SIMPLE THEORETICAL ESTIMATES OF SCHOTTKY CONSTANTS AND VIRTUAL-ENTHALPIES OF SINGLE VACANCY FORMATION IN ZINCBLENDE AND WURTZITE TYPE SEMICONDUCTORS [J].

VANVECHTEN, JA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (03) :419-422

[7] SOME PROPERTIES OF IN2TE3 AND GA2TE3 [J].

WOOLLEY, JC ;

PAMPLIN, BR .

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[8]

ZHUZE VP, 1960, INT C SEMICOND PHYSI, P871

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