DEPOSITION OF DIAMOND ONTO AN ALUMINUM SUBSTRATE BY DC PLASMA CVD

被引：14

作者：

NAKAO, S ^{[1
]}

NODA, M ^{[1
]}

KUSAKABE, H ^{[1
]}

SHIMIZU, H ^{[1
]}

MARUNO, S ^{[1
]}

机构：

[1] AICHI UNIV EDUC,DEPT TECHNOL,KARIYA,AICHI 448,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1990年 / 29卷 / 08期

关键词：

DC plasma chemical vapor deposition; Diamond deposition on AI substrate; Diamond film; Hydrogenated amorphous component; Nanocrystalline diamond crystal; Thin-film growth technique;

D O I：

10.1143/JJAP.29.1511

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Diamond films are deposited on an aluminum substrate under a constant high discharge current (Id=700 mA) and a methane concentration of about 2% by DC plasma CVD, and their structural characteristics resulting from the difference in substrate temperature (Ts: 140–480°C) are investigated. Many diamond particles with an average size of 0.3 µm and having a clear crystal habit are formed at Ts about 480°C. When Ts is decreased, the deposited films tend to contain hydrogenated amorphous components as well as amorphous carbon phases. The films deposited at extremely low Ts, such as 140°C, are composed of submicron grains like pebbles, in which nanocrystalline diamond crystals and amorphous phases having C–C and C–H bonds aggregate to form these submicron grains. It has been found that diamond films with different grain morphology are deposited on the Al substrate. © 1990 The Japan Society of Applied Physics.

引用

页码：1511 / 1514

页数：4

共 14 条

[1] MODELING STUDIES OF AMORPHOUS-CARBON [J].