MACROSCOPIC AXIAL DOPANT DISTRIBUTION IN CZOCHRALSKI SILICON-CRYSTALS GROWN IN A VERTICAL MAGNETIC-FIELD

被引:9
作者
HIRATA, H
INOUE, N
机构
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1985年 / 24卷 / 11期
关键词
D O I
10.1143/JJAP.24.1399
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1399 / 1403
页数:5
相关论文
共 17 条
[1]  
BURTON JA, 1953, J CHEM PHYS, V21, P1981
[2]  
CARRUTHERS JR, 1977, SEMICONDUCTOR SILICO, P61
[3]   STUDY OF THERMAL SYMMETRY IN CZOCHRALSKI SILICON MELT UNDER A VERTICAL MAGNETIC-FIELD [J].
HIRATA, H ;
INOUE, N .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (08) :L527-L530
[4]   IMPROVEMENT OF THERMAL SYMMETRY IN CZ SILICON MELTS BY THE APPLICATION OF A VERTICAL MAGNETIC-FIELD [J].
HIRATA, H ;
HOSHIKAWA, K ;
INOUE, N .
JOURNAL OF CRYSTAL GROWTH, 1984, 70 (1-2) :330-334
[5]   CZOCHRALSKI SILICON-CRYSTALS GROWN IN A TRANSVERSE MAGNETIC-FIELD [J].
HOSHI, K ;
ISAWA, N ;
SUZUKI, T ;
OHKUBO, Y .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (03) :693-700
[6]   CZOCHRALSKI SILICON CRYSTAL-GROWTH IN THE VERTICAL MAGNETIC-FIELD [J].
HOSHIKAWA, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (09) :L545-L547
[7]   ON THE DISTRIBUTION OF IMPURITY IN CRYSTALS GROWN FROM IMPURE UNSTIRRED MELTS [J].
HULME, KF .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1955, 68 (07) :393-399
[8]   RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON [J].
IRVIN, JC .
BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (02) :387-+
[9]   LARGE HOMOGENEOUS PB1-XSNXTE SINGLE-CRYSTAL GROWTH BY VAPOR MELT SOLID MECHANISM [J].
KINOSHITA, K ;
MIYAZAWA, S .
JOURNAL OF CRYSTAL GROWTH, 1982, 57 (01) :141-144
[10]  
Kodera H., 1963, JAP J APPL PHYS, V2, P212, DOI [10.1143/JJAP.2.212, DOI 10.1143/JJAP.2.212]