IMPROVEMENT OF THERMAL SYMMETRY IN CZ SILICON MELTS BY THE APPLICATION OF A VERTICAL MAGNETIC-FIELD

被引：21

作者：

HIRATA, H

HOSHIKAWA, K

INOUE, N

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1984年 / 70卷 / 1-2期

关键词：

D O I：

10.1016/0022-0248(84)90283-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：330 / 334

页数：5

共 11 条

[1] SOLUTE STRIAE IN PULLED CRYSTALS OF ZINC TUNGSTATE [J].

BRICE, JC ;

WHIFFIN, PAC .

BRITISH JOURNAL OF APPLIED PHYSICS, 1967, 18 (05) :581-&

[2]

BURTON JA, 1953, J CHEM PHYS, V21, P1981

[3] STUDY OF THERMAL SYMMETRY IN CZOCHRALSKI SILICON MELT UNDER A VERTICAL MAGNETIC-FIELD [J].

HIRATA, H ;

INOUE, N .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (08) :L527-L530

[4]

HIRATA H, 1981, Patent No. 149894

[5]

HOSHI K, 1980 EL SOC SPRING M, P811

[6]

HOSHI K, 1982, 20TH P SEM TECHN SCH, P181

[7] CZOCHRALSKI SILICON CRYSTAL-GROWTH IN THE VERTICAL MAGNETIC-FIELD [J].

HOSHIKAWA, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (09) :L545-L547

[8]

HOSHIKAWA K, 1984, JPN J APPL PHYS, V23, pL38

[9] DETERMINATION OF ATOMIC KINETICS OF FREEZING PROCESS .1. THEORY [J].

KRAMER, JJ ;

TILLER, WA .

JOURNAL OF CHEMICAL PHYSICS, 1962, 37 (04) :841-&

[10] ELIMINATION OF RANDOM COMPOSITIONAL INHOMOGENEITIES IN CZOCHRALSKI GROWN SILICON [J].

MURGAI, A ;

WITT, AF ;

GATOS, HC .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (09) :1276-1277

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