MICROSTRUCTURE OF GAAS GROWN BY EXCIMER LASER-ASSISTED CHEMICAL BEAM EPITAXY

Selective-area CBE growth of GaAs on (100) GaAs substrates has been achieved using focused XeCl (308 nm) excimer laser assistance. The highest selectivity, at the growth rates used (approximately 1 mum h-1), occurred when the substrate temperature was < 400-degrees-C and the laser fluence was approximately 90 mJ cm-2. GaAs grown by laser-assisted CBE was found to contain dislocation tangles and to have an associated regular ripple structure on a scale of 300 nm.