SELECTED AREA GROWTH OF GAAS BY LASER-INDUCED PYROLYSIS OF ADSORBED TRIETHYLGALLIUM

被引：20

作者：

DONNELLY, VM

MCCAULLEY, JA

机构：

来源：

关键词：

D O I：

10.1063/1.101071

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2458 / 2460

页数：3

共 19 条

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[7] ARF EXCIMER-LASER-STIMULATED GROWTH OF POLYCRYSTALLINE GAAS THIN-FILMS
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[J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (04) : 1410 - 1414
[8] EXCIMER LASER-INDUCED DEPOSITION OF INP AND INDIUM-OXIDE FILMS
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[J]. APPLIED PHYSICS LETTERS, 1984, 44 (10) : 951 - 953
[9] EXCIMER LASER-INDUCED DEPOSITION OF INP - CRYSTALLOGRAPHIC AND MECHANISTIC STUDIES
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[J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (05) : 2022 - 2035
[10] DONNELLY VM, 1989, LASER PARTICLE BEAM