ARF EXCIMER-LASER-STIMULATED GROWTH OF POLYCRYSTALLINE GAAS THIN-FILMS

[1] Basco N., 1970, INT J CHEM KINET, V2, P215

[2] DETERMINATION OF HEAT OF FORMATION OF TRIMETHYLINDIUM AND CALCULATION OF MEAN IN-CH3 BOND DISSOCIATION ENERGY [J]. CANADIAN JOURNAL OF CHEMISTRY, 1968, 46 (10): : 1633 - &

[3] EXCIMER LASER-INDUCED DEPOSITION OF INP AND INDIUM-OXIDE FILMS [J]. APPLIED PHYSICS LETTERS, 1984, 44 (10) : 951 - 953

[4] EXCIMER LASER-INDUCED DEPOSITION OF INP - CRYSTALLOGRAPHIC AND MECHANISTIC STUDIES [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (05) : 2022 - 2035

[5] PYROLYSIS OF TRIMETHYL GALLIUM [J]. CANADIAN JOURNAL OF CHEMISTRY-REVUE CANADIENNE DE CHIMIE, 1963, 41 (06): : 1560 - &

[6] JUANG C, 1985, NOV AM VAC SOC S HOU

[7] LASER DIRECT WRITING OF SINGLE-CRYSTAL III-V COMPOUNDS ON GAAS [J]. APPLIED PHYSICS LETTERS, 1986, 49 (14) : 880 - 882

[8] KOZLOV MG, 1968, OPT SPEKTROSK, V24, P8

[9] Long L.H., 1961, PURE APPL CHEM, V2, P61

[10] MCCRARY VR, IN PRESS FAL P MAT R

[1] Basco N., 1970, INT J CHEM KINET, V2, P215

[2] DETERMINATION OF HEAT OF FORMATION OF TRIMETHYLINDIUM AND CALCULATION OF MEAN IN-CH3 BOND DISSOCIATION ENERGY [J]. CANADIAN JOURNAL OF CHEMISTRY, 1968, 46 (10): : 1633 - &

[3] EXCIMER LASER-INDUCED DEPOSITION OF INP AND INDIUM-OXIDE FILMS [J]. APPLIED PHYSICS LETTERS, 1984, 44 (10) : 951 - 953

[4] EXCIMER LASER-INDUCED DEPOSITION OF INP - CRYSTALLOGRAPHIC AND MECHANISTIC STUDIES [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (05) : 2022 - 2035

[5] PYROLYSIS OF TRIMETHYL GALLIUM [J]. CANADIAN JOURNAL OF CHEMISTRY-REVUE CANADIENNE DE CHIMIE, 1963, 41 (06): : 1560 - &

[6] JUANG C, 1985, NOV AM VAC SOC S HOU

[7] LASER DIRECT WRITING OF SINGLE-CRYSTAL III-V COMPOUNDS ON GAAS [J]. APPLIED PHYSICS LETTERS, 1986, 49 (14) : 880 - 882

[8] KOZLOV MG, 1968, OPT SPEKTROSK, V24, P8

[9] Long L.H., 1961, PURE APPL CHEM, V2, P61

[10] MCCRARY VR, IN PRESS FAL P MAT R