LPE GROWTH AND PULSED ROOM-TEMPERATURE LASER OPERATION OF IN1-XGAXASZP1-Z ON (100) GAAS1-YPY(Y CONGRUENT-TO 0.39)

被引：10

作者：

SHIMURA, M

FUJIMOTO, A

YASUDA, H

YAMASHITA, S

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1982年 / 21卷 / 06期

关键词：

D O I：

10.1143/JJAP.21.L338

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L338 / L340

页数：3

共 10 条

[1]

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[2] CONTINUOUS OPERATION OF VISIBLE-SPECTRUM IN1-XGAXP1-ZASZ LASER-DIODES (6280-A, 77-K) [J].

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[3] PULSED ROOM-TEMPERATURE OPERATION OF IN1-XGAXP1-ZASZ DOUBLE HETEROJUNCTION LASERS AT HIGH-ENERGY (6470 A, 1.916 EV) [J].

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[5] LIMITATIONS OF DIRECT-INDIRECT TRANSITION ON IN1-XGAXP1-ZASZ HETEROJUNCTIONS [J].

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GROVES, WO .

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[6] 6190-A EMISSION AT 77 K OF GA1-XALXAS DOUBLE HETEROSTRUCTURE LASERS [J].

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[7]

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[8] LPE GROWTH AND LUMINESCENCE OF IN1-XGAXPYAS1-Y ON (1, 0, 0) GAAS WITH BAND-GAP ENERGY IN THE REGION OF 1.569 EV LESS-THAN-OR EQUAL-TO EG LESS-THAN-OR EQUAL-TO 1.893 EV [J].

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[9]

SHIMURA M, 1981, OMRON TECHNICS, P21

[10] LATTICE-MATCHED LPE GROWTH OF IN1-XGAXP1-YASY LAYERS ON (100) GAAS SUBSTRATES [J].

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