MINORITY-CARRIER LIFETIME IN ALXGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXY

Al(x) Ga(1-x)As (x > 0.30) double heterostructures are grown by molecular-beam epitaxy (MBE) and the minority-carrier lifetimes are measured by time-resolved photoluminescence. The data indicate that the minority-carrier lifetime in high aluminum (x > 0.30) Al(x)Ga(1-x)As grown by MBE are comparable to the previously published lifetimes of material grown by liquid-phase epitaxy. The lifetimes in MBE materials appear to be somewhat larger than those measured in materials grown by metalorganic chemical vapor deposition. Factors affecting AlGaAs minority-carrier lifetime, such as the growth temperature, the aluminum concentration, and the confinement layer composition will be discussed.