PHOTOLUMINESCENCE LIFETIME IN HETEROJUNCTIONS

被引：26

作者：

AHRENKIEL, RK

DUNLAVY, DJ

HANAK, T

机构：

[1] Solar Energy Research Inst, United States

来源：

SOLAR CELLS | 1988年 / 24卷 / 3-4期

关键词：

D O I：

10.1016/0379-6787(88)90086-5

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

引用

页码：339 / 352

页数：14

共 12 条

[1] ION-BEAM SPUTTERED INDIUM TIN OXIDE FOR INP SOLAR-CELLS
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03): : 428 - 431
[2] HIGH-SPEED CHARACTERIZATION OF PHOTOVOLTAIC DEVICES
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[J]. SOLAR CELLS, 1987, 21 : 353 - 369
[3] SURFACE COMPENSATION OF P-INP AS OBSERVED BY CAPACITANCE DISPERSION
AHRENKIEL, RK
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ROYBAL, L
HAYES, RE
[J]. APPLIED PHYSICS LETTERS, 1983, 43 (07) : 675 - 676
[4] TIME-OF-FLIGHT STUDIES OF MINORITY-CARRIER DIFFUSION IN ALXGA1-XAS HOMOJUNCTIONS
AHRENKIEL, RK
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LEWIS, CR
HAYES, RE
FARDI, H
[J]. APPLIED PHYSICS LETTERS, 1986, 49 (12) : 725 - 727
[5] INFLUENCE OF JUNCTIONS ON PHOTOLUMINESCENCE DECAY IN THIN-FILM DEVICES
AHRENKIEL, RK
[J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (07) : 2937 - 2941
[6] AHRENKIEL RK, 1987, 19TH P IEEE PHOT SPE, P1180
[7] EVIDENCE FOR LOW SURFACE RECOMBINATION VELOCITY ON N-TYPE INP
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[J]. APPLIED PHYSICS LETTERS, 1977, 30 (05) : 247 - 249
[8] DIFFUSION LENGTH OF MOLES IN N-INP
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ARMIENTO, CA
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[J]. APPLIED PHYSICS LETTERS, 1983, 42 (10) : 892 - 894
[9] ELECTRON-DIFFUSION LENGTHS IN PARA-TYPE INP INVOLVED IN INDIUM TIN OXIDE PARA-INP SOLAR-CELLS
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LUQUET, H
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OEMRY, A
BOUSTANI, M
NGUYEN, PH
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) : 7014 - 7019
[10] HANAK T, 1987, THESIS U DENVER CO