TEMPERATURE AND DOPING-CONCENTRATION DEPENDENCE OF THE OSCILLATORY PROPERTIES OF THE PHOTOREFLECTANCE SPECTRA FROM GAAS GROWN BY MOLECULAR-BEAM EPITAXY

被引：28

作者：

LU, CR

ANDERSON, JR

STONE, DR

BEARD, WT

WILSON, RA

KUECH, TF

WRIGHT, SL

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

[2] LAB PHYS SCI,COLLEGE PK,MD 20740

来源：

PHYSICAL REVIEW B | 1991年 / 43卷 / 14期

关键词：

D O I：

10.1103/PhysRevB.43.11791

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The temperature and doping-concentration dependence of the oscillatory properties in the photoreflectance (PR) spectra of GaAs grown by molecular-beam epitaxy has been studied in detail. The peak separation of the oscillatory part of the PR spectrum is related to the internal electric field in the sample. Both the peak spacing of the oscillations and the internal electric field increase with increasing temperature and doping density. A PR spectrum with two kinds of oscillations from two interfaces across different doping profiles was also observed. Our study of oscillatory properties not only verified the electromodulation character of the PR experiment but also extracted the temperature dependence of the surface Fermi level.

引用

页码：11791 / 11797

页数：7

共 28 条

[1] GE-AQUEOUS-ELECTROLYTE INTERFACE - ELECTRICAL PROPERTIES AND ELECTROREFLECTANCE AT FUNDAMENTAL DIRECT THRESHOLD [J].