ADVANCED CELL STRUCTURES FOR DYNAMIC RAMS

被引：10

作者：

LU, NCC

机构：

来源：

IEEE CIRCUITS AND DEVICES MAGAZINE | 1989年 / 5卷 / 01期

关键词：

D O I：

10.1109/101.17236

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：27 / 36

页数：10

共 55 条

[1]

BANERJEE S, 1987, S VLSI, P97

[2]

BRONNER G, 1988, S VLSI TECH, P21

[3]

CARDON A, 1984, DYNAMIC SEMICONDUCTO

[4]

Chatterjee P., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P128

[5] SURVEY OF HIGH-DENSITY DYNAMIC RAM CELL CONCEPTS [J].

CHATTERJEE, PK ;

TAYLOR, GW ;

EASLEY, RL ;

FU, HS ;

TASCH, AF .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (06) :827-838

[6]

Dennard R. H., 1968, U.S. Patent, Patent No. [3387286, 3,387,286]

[7] EVOLUTION OF THE MOSFET DYNAMIC RAM - A PERSONAL VIEW [J].

DENNARD, RH .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (11) :1549-1555

[8] AN EXPERIMENTAL 4-MBIT CMOS DRAM [J].

FURUYAMA, T ;

OHSAWA, T ;

WATANABE, Y ;

ISHIUCHI, H ;

WATANABE, T ;

TANAKA, T ;

NATORI, K ;

OZAWA, O .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1986, 21 (05) :605-611

[9]

FURUYAMA T, 1986, ISSCC, P272

[10]

FURUYAMA T, 1984, S VLSI TECH, P16

← 1 2 3 4 5 6 →