ANISOTROPY OF HIGH-TEMPERATURE HARDNESS IN 6H SILICON-CARBIDE

被引：25

作者：

FUJITA, S

MAEDA, K

HYODO, S

机构：

[1] Univ of Tokyo, Tokyo, Jpn, Univ of Tokyo, Tokyo, Jpn

来源：

JOURNAL OF MATERIALS SCIENCE LETTERS | 1986年 / 5卷 / 04期

关键词：

D O I：

10.1007/BF01672358

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

10

引用

收藏

页码：450 / 452

页数：3

相关论文

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