CRYSTALLINE-TO-AMORPHOUS TRANSITION FOR SI-ION IRRADIATION OF SI(100)

被引:78
作者
SCHULTZ, PJ [1 ]
JAGADISH, C [1 ]
RIDGWAY, MC [1 ]
ELLIMAN, RG [1 ]
WILLIAMS, JS [1 ]
机构
[1] UNIV WESTERN ONTARIO,DEPT PHYS,LONDON N6A 3K7,ONTARIO,CANADA
来源
PHYSICAL REVIEW B | 1991年 / 44卷 / 16期
关键词
D O I
10.1103/PhysRevB.44.9118
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Silicon (100) crystals are implanted with 1-MeV Si2+ ions to a fixed fluence of 1 x 10(15) ions/cm2 at systematically different incident-ion dose rates, R, and substrate temperatures, T. A critical dependence on T is found for R(t), the critical flux for formation of a continuous amorphous layer in the substrate material. The activation energy characterizing the process is found to be 0.9 +/- 0.05 eV, which is attributed to the collapse of defect complexes formed during irradiation. Critical temperatures for this process, at each fixed dose rate, are all near room temperature.
引用
收藏
页码:9118 / 9121
页数:4
相关论文
共 12 条
[1]  
BOURGOIN JC, 1983, POINT DEFECT SEMICON, V2, pCH9
[2]   1.8- 3.3- AND 3.9-MU BANDS IN IRRADIATED SILICON - CORRELATIONS WITH DIVACANCY [J].
CHENG, LJ ;
CORELLI, JC ;
CORBETT, JW ;
WATKINS, GD .
PHYSICAL REVIEW, 1966, 152 (02) :761-+
[3]   ION-INDUCED DEFECTS IN SEMICONDUCTORS [J].
CORBETT, JW ;
KARINS, JP ;
TAN, TY .
NUCLEAR INSTRUMENTS & METHODS, 1981, 182 (APR) :457-476
[4]   ION IMPLANTATION OF SILICON .I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MEV HELIUM ION SCATTERING [J].
DAVIES, JA ;
DENHARTO.J ;
ERIKSSON, L ;
MAYER, JW .
CANADIAN JOURNAL OF PHYSICS, 1967, 45 (12) :4053-&
[5]  
ELLIMAN RG, 1988, MATER RES SOC S P, V100, P363
[6]  
FREEMAN JH, 1975, ION IMPLANTATION SEM, P555
[7]   ION IMPLANTATION IN SEMICONDUCTORS .2. DAMAGE PRODUCTION AND ANNEALING [J].
GIBBONS, JF .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1972, 60 (09) :1062-&
[8]   DIVACANCY CONTROL OF THE BALANCE BETWEEN ION-BEAM-INDUCED EPITAXIAL CRYSTALLIZATION AND AMORPHIZATION IN SILICON [J].
LINNROS, J ;
ELLIMAN, RG ;
BROWN, WL .
JOURNAL OF MATERIALS RESEARCH, 1988, 3 (06) :1208-1211
[9]  
TAN TY, 1981, MATER RES SOC S P, V2, P163
[10]  
Vook F. L., 1969, Radiation Effects, V2, P23, DOI 10.1080/00337576908235576