共 12 条
[1]
BOURGOIN JC, 1983, POINT DEFECT SEMICON, V2, pCH9
[2]
1.8- 3.3- AND 3.9-MU BANDS IN IRRADIATED SILICON - CORRELATIONS WITH DIVACANCY
[J].
PHYSICAL REVIEW,
1966, 152 (02)
:761-+
[3]
ION-INDUCED DEFECTS IN SEMICONDUCTORS
[J].
NUCLEAR INSTRUMENTS & METHODS,
1981, 182 (APR)
:457-476
[5]
ELLIMAN RG, 1988, MATER RES SOC S P, V100, P363
[6]
FREEMAN JH, 1975, ION IMPLANTATION SEM, P555
[7]
ION IMPLANTATION IN SEMICONDUCTORS .2. DAMAGE PRODUCTION AND ANNEALING
[J].
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS,
1972, 60 (09)
:1062-&
[9]
TAN TY, 1981, MATER RES SOC S P, V2, P163
[10]
Vook F. L., 1969, Radiation Effects, V2, P23, DOI 10.1080/00337576908235576