THE ROLE OF BE IN (GAAL)AS/GAAS SOLAR-CELLS

被引:10
作者
MASU, K [1 ]
NAKATSUKA, S [1 ]
KONAGAI, M [1 ]
TAKAHASHI, K [1 ]
机构
[1] TOKYO INST TECHNOL,DEPT PHYS ELECTR,MEGURO KU,TOKYO 152,JAPAN
关键词
D O I
10.1149/1.2124221
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:1623 / 1627
页数:5
相关论文
共 15 条
[1]   SERIES RESISTANCE EFFECTS IN (GAAL)AS-GAAS CONCENTRATOR SOLAR-CELLS [J].
CHARAN, S ;
KONAGAI, M ;
TAKAHASHI, K .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) :963-968
[2]   COMPARISON OF ZN-DOPED GAAS LAYERS PREPARED BY LIQUID-PHASE AND VAPOR-PHASE TECHNIQUES, INCLUDING DIFFUSION LENGTHS AND PHOTOLUMINESCENCE [J].
ETTENBERG, M ;
NUESE, CJ .
JOURNAL OF APPLIED PHYSICS, 1975, 46 (08) :3500-3508
[3]  
Ewan J., 1975, 11th IEEE Photovoltaic Specialists Conference, P409
[4]  
Ewan J., 1978, Thirteenth IEEE Photovoltaic Specialists Conference1978, P941
[5]  
GOLDSTEIN B, 1960, PHYS REV, V118, P1024
[6]   SCANNING ELECTRON-MICROSCOPE CHARACTERIZATION OF GAP RED-EMITTING DIODES [J].
HACKETT, WH ;
SAUL, RH ;
KAMMLOTT, GW ;
DIXON, RW .
JOURNAL OF APPLIED PHYSICS, 1972, 43 (06) :2857-+
[7]   GAAS CONCENTRATOR SOLAR CELL [J].
JAMES, LW ;
MOON, RL .
APPLIED PHYSICS LETTERS, 1975, 26 (08) :467-470
[8]   ACCEPTOR ENERGY-LEVEL FOR ZN IN GA1-XALXAS [J].
MASU, K ;
KONAGAI, M ;
TAKAHASHI, K .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (02) :1060-1064
[9]  
MASU K, 1979, 1ST P PHOT SCI ENG C, P191
[10]   THEORY OF AN EXPERIMENT FOR MEASURING THE MOBILITY AND DENSITY OF CARRIERS IN THE SPACE-CHARGE REGION OF A SEMICONDUCTOR SURFACE [J].
PETRITZ, RL .
PHYSICAL REVIEW, 1958, 110 (06) :1254-1262