COMPARISON OF THE DAMAGE AND CONTAMINATION PRODUCED BY CF4 AND CF4/H2 REACTIVE ION ETCHING - THE ROLE OF HYDROGEN

被引：33

作者：

MU, XC

FONASH, SJ

ROHATGI, A

RIEGER, J

机构：

[1] GEORGIA INST TECHNOL,SCH ELECT ENGN,ATLANTA,GA 30332

[2] WESTINGHOUSE ELECT CORP,CTR RES & DEV,PITTSBURGH,PA 15235

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 17期

关键词：

D O I：

10.1063/1.96452

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：1147 / 1149

页数：3

相关论文

共 9 条

[1] ADLER D, 1984, SEMICONDUCT SEMIMET, V21, P291
[2] CLIMENT A, 1984, P S THIN FILMS INTER, V25
[3] INSITU AUGER-ELECTRON SPECTROSCOPY OF SI AND SIO2 SURFACES PLASMA ETCHED IN CF4-H2 GLOW-DISCHARGES
COBURN, JW
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (08) : 5210 - 5213
[4] SELECTIVE ETCHING OF SILICON DIOXIDE USING REACTIVE ION ETCHING WITH CF4-H2
EPHRATH, LM
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (08) : 1419 - 1421
[5] FONASH SJ, 1985, SOLID STATE TECHNOL, V28, P201
[6] SILICON DAMAGE CAUSED BY HYDROGEN CONTAINING PLASMAS
FRIESER, RG
MONTILLO, FJ
ZINGERMAN, NB
CHU, WK
MADER, SR
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (11) : 2237 - 2241
[7] OEHRLEIN GS, 1983, J ELECTROCHEM SOC, V130, P2237
[8] OEHRLEIN GS, 1985, APPL PHYS LETT, V45, P422
[9] PHOTOLUMINESCENCE OF HYDROGENATED AMORPHOUS SILICON
PANKOVE, JI
CARLSON, DE
[J]. APPLIED PHYSICS LETTERS, 1977, 31 (07) : 450 - 451