THERMAL-STABILITY OF AL/ALGAAS AND AL/GAAS/ALGAAS(MBE) SCHOTTKY BARRIERS

被引：9

作者：

BOSACCHI, A ^{[1
]}

FRANCHI, S ^{[1
]}

GOMBIA, E ^{[1
]}

MOSCA, R ^{[1
]}

FANTINI, F ^{[1
]}

FRANCHI, S ^{[1
]}

MENOZZI, R ^{[1
]}

机构：

[1] UNIV PARMA,DEPT INFORMAT ENGN,I-43100 PARMA,ITALY

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 08期

关键词：

SCHOTTKY BARRIER DEVICES; SEMICONDUCTORS;

D O I：

10.1049/el:19930436

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Outstanding stability has been observed in Al/AlxGa1-xAs and Al/GaAs/AlxGa1-xAs (x = 0.25) Schottky barriers prepared by depositing Al in situ by MBE on annealing up to 400-degrees-C. Conventionally evaporated barriers have been fabricated and compared with epitaxial ones. The changes in barrier height and ideality factor induced by annealing are reported.

引用

页码：651 / 653

页数：3

共 7 条

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