CONTROL OF BALLISTIC ELECTRONS IN (ALGA)AS/GAAS HETEROSTRUCTURES BY MEANS OF SUPERCONDUCTING NIOBIUM GATE STRUCTURES

被引：4

作者：

SCHAPERS, T

MULLER, F

FORSTER, A

LENGELER, B

LUTH, H

机构：

[1] Institut für Schicht-und Ionentechnik, Forschungszentrum Jülich (KFA)., D-5170 Jülich

来源：

SURFACE SCIENCE | 1994年 / 305卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(94)90936-9

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Superconducting gate structures on a modulation doped (AlGa)As/GaAs heterostructure were used to control a ballistic electron beam within the high mobility 2DEG. A local and variable magnetic field was produced by superconducting current loops. The magnetic field induced by the loops was analysed by means of an external magnetic field as well as by an electron interference experiment. The maximum field obtained by two superconducting loops was 0.4 mT. In addition, a gate structure containing a superconducting ring between two opposite split gates was prepared in order to detect magnetic flux quantisation.

引用

页码：460 / 464

页数：5

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