THE EFFECTS OF N-2(+) AND B+ ION-IMPLANTATION ON THE HARDNESS BEHAVIOR AND NEAR-SURFACE STRUCTURE OF SIC

被引：29

作者：

ROBERTS, SG ^{[1
]}

PAGE, TF ^{[1
]}

机构：

[1] UNIV CAMBRIDGE,DEPT MET & SCI MAT,CAMBRIDGE,ENGLAND

来源：

JOURNAL OF MATERIALS SCIENCE | 1986年 / 21卷 / 02期

关键词：

D O I：

10.1007/BF01145509

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：457 / 468

页数：12

共 36 条

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PAGE, TF .

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[4] SURFACE SOFTENING IN SILICON BY ION-IMPLANTATION [J].

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[7]

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[8]

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[9] DISPLACEMENT CRITERION FOR AMORPHIZATION OF SILICON DURING ION-IMPLANTATION [J].

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[10]

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