OPTIMIZATION OF SI-IMPLANTED THERMISTORS FOR HIGH-RESOLUTION CALORIMETERS TO BE USED IN A NEUTRINO MASS EXPERIMENT

被引：4

作者：

ALESSANDRELLO, A ^{[1
]}

BROFFERIO, C ^{[1
]}

CAMIN, DV ^{[1
]}

CATTADORI, C ^{[1
]}

CREMONESI, O ^{[1
]}

FIORINI, E ^{[1
]}

GARCIA, E ^{[1
]}

GIULIANI, A ^{[1
]}

PAVAN, M ^{[1
]}

PESSINA, G ^{[1
]}

PREVITALI, E ^{[1
]}

ZANOTTI, L ^{[1
]}

机构：

[1] INFN,MILAN,ITALY

来源：

JOURNAL OF LOW TEMPERATURE PHYSICS | 1993年 / 93卷 / 3-4期

关键词：

D O I：

10.1007/BF00693443

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A procedure of optimization of Si-implanted thermistors was started, with the final aim to develop bolometers with a resolution of a few eV in the keV range. The initial approach was to assume that a thermal decoupling between phonons and hopping electrons establishes inside the thermistors, with consequent reduction of the sensitivity and incomplete transfer of the particle generated phonons to the conduction electrons. This assumption however failed in explaining the collected experimental data, which can be described much more satisfactorily introducing an electric field dependance of the thermistor resistance. This alternative interpretation modifies the parameter choice for an optimum device

引用

页码：337 / 342

页数：6

共 10 条

[1]

ALESSANDRELLO A, 1990, EDITIONS FRONTIERES, V26, P243

[2] NONOHMIC HOPPING CONDUCTION IN DOPED GERMANIUM AT T LESS-THAN 1-K [J].