THERMAL EFFECTS IN PROPERTIES OF PHOTOVOLTAIC CURRENTS OF PB(ZR,TI)O-3 THIN-FILMS

被引:17
作者
MATSUMURA, A [1 ]
KAMAIKE, Y [1 ]
HORIUCHI, T [1 ]
SHIMIZU, M [1 ]
机构
[1] HIMEJI INST TECHNOL,FAC ENGN,DEPT ELECTR,HIMEJI,HYOGO 67122,JAPAN
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1995年 / 34卷 / 9B期
关键词
PB(ZR; TI)O-3 THIN FILM; PHOTOVOLTAIC CURRENT; APV EFFECT; THERMAL EFFECT; SCHOTTKY BARRIER; ANNEALING; HYSTERESIS LOOP;
D O I
10.1143/JJAP.34.5258
中图分类号
O59 [应用物理学];
学科分类号
摘要
Thermal effects in the characteristics of photovoltaic currents of Pb(Zr, Ti)O-3 (PZT) thin films we-re studied from room temperature up to 360 degrees C. The photovoltaic currents at a steady state increased with increasing temperature and then decreased above 250 degrees C. By conducting annealing for positively or negatively poled samples, the traces of photovoltaic currents gradually became symmetric, suggesting the improvement of crystallinity of PZT thin films and/or the formation of a symmetric pair of Schottky junctions at two interfaces with electrodes. Furthermore, this suggestion was supported by the significant improvement in the characteristics of hysteresis loops upon annealing.
引用
收藏
页码:5258 / 5262
页数:5
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