LASER-INDUCED ELECTRONIC EMISSIONS OF SI ATOMS FROM SI(100) SURFACES

被引：14

作者：

KANASAKI, J

YU, IK

NAKAI, Y

ITOH, N

机构：

[1] Department of Physics, Nagoya University, Nagoya, 464-01, Fur ocho Chikusaku

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1993年 / 32卷 / 6B期

关键词：

SILICON; SI(100) SURFACE; DESORPTION; LASER-INDUCED SURFACE PROCESS; REACTIVE ETCHING; SURFACE DEFECTS;

D O I：

10.1143/JJAP.32.L859

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have carried out highly sensitive measurements of Si-degrees atoms from the Si(100) surfaces emitted by irradiation with 2.48 eV laser pulses. The results indicate all characteristics of the defect-initiated emissions of electronic origin obtained for the emission of Ga-degrees atoms from GaP and GaAs surfaces: we found that the yield is a super-linear function of the fluence and decreases first rapidly and then slowly as the irradiation with laser pulses is repeated. The emission yield after eliminating the rapidly decaying component is found to be enhanced by deposition of submonolayer Br atoms.

引用

页码：L859 / L862

页数：4

共 19 条

[1] ADSORPTION AND ELECTRON-STIMULATED DESORPTION OF NH3/TIO2(110) [J].