TEMPERATURE-DEPENDENCE OF SILICON LUMINESCENCE DUE TO SPLITTING OF INDIRECT GROUND-STATE

被引：45

作者：

HAMMOND, RB ^{[1
]}

SMITH, DL ^{[1
]}

MCGILL, TC ^{[1
]}

机构：

[1] CALTECH,PASADENA,CA 91125

来源：

关键词：

D O I：

10.1103/PhysRevLett.35.1535

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1535 / 1538

页数：4

共 16 条

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