BARIUM-TITANATE THIN-FILM HUMIDITY SENSITIVE CAPACITOR

[1] PHENOMENOLOGICAL THEORY OF HIGH PERMITTIVITY IN FINE-GRAINED BARIUM TITANATE [J]. JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1966, 49 (01) : 33 - &

[2] A NEW THIN-FILM HUMIDITY MICROSENSOR [J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (11) : 452 - 453

[3] DAT RVH, 1967, PHYS STATUS SOLIDI, V22, P67

[4] PHOTO-VOLTAIC PROPERTIES OF FERROELECTRIC BATIO3 THIN-FILMS RF SPUTTER DEPOSITED ON SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (12) : 8988 - 8992

[5] DHARMADHIKARI VS, 1982, NASA931 U NEW MEX

[6] DHARMADHIKARI VS, 1982, EE273 TECHN REP

[7] HIJKIGAWA M, 1983, SENSORS ACTUATORS, V4, P307

[8] JACKOWICZ RS, 1980, ELECTRONICS MICROELE, P654

[9] JACKOWICZ RS, 1981, SENSORS ACTUATORS, V2, P171

[10] Janovec V., 1960, J PHYS B ATOM MOL PH, V10, P690

[1] PHENOMENOLOGICAL THEORY OF HIGH PERMITTIVITY IN FINE-GRAINED BARIUM TITANATE [J]. JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1966, 49 (01) : 33 - &

[2] A NEW THIN-FILM HUMIDITY MICROSENSOR [J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (11) : 452 - 453

[3] DAT RVH, 1967, PHYS STATUS SOLIDI, V22, P67

[4] PHOTO-VOLTAIC PROPERTIES OF FERROELECTRIC BATIO3 THIN-FILMS RF SPUTTER DEPOSITED ON SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (12) : 8988 - 8992

[5] DHARMADHIKARI VS, 1982, NASA931 U NEW MEX

[6] DHARMADHIKARI VS, 1982, EE273 TECHN REP

[7] HIJKIGAWA M, 1983, SENSORS ACTUATORS, V4, P307

[8] JACKOWICZ RS, 1980, ELECTRONICS MICROELE, P654

[9] JACKOWICZ RS, 1981, SENSORS ACTUATORS, V2, P171

[10] Janovec V., 1960, J PHYS B ATOM MOL PH, V10, P690