AN EXTRA DIFFUSION OF ZN INTO GAAS IN LOW CONCENTRATION RANGE - APPLICATION OF THE MODEL OF VARYING CHARGE-TRANSFER

被引：7

作者：

KAZMIERSKI, K

LAUNAY, F

DECREMOUX, B

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1987年 / 26卷 / 10期

关键词：

D O I：

10.1143/JJAP.26.1630

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1630 / 1633

页数：4

共 12 条

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[6] A SIMPLE-MODEL AND CALCULATION OF THE INFLUENCE OF DOPING AND INTRINSIC CONCENTRATIONS ON THE INTERSTITIAL-SUBSTITUTIONAL DIFFUSION MECHANISM - APPLICATION TO ZN AND CD IN INP [J].

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[7] THE TEMPERATURE-DEPENDENT DIFFUSION MECHANISM OF ZN IN INP USING THE SEMICLOSED DIFFUSION METHOD [J].

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[8] USE OF IN-ZN-AS TERNARY SOURCES FOR THE DIFFUSION OF ZN IN GAAS BY THE SEMICLOSED-BOX METHOD [J].

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