THE EFFECTS OF ION-IMPLANTATION DAMAGE ON THE 1ST-ORDER RAMAN-SPECTRA OF GAP

[1] EFFECTS OF IMPLANTATION AND ANNEALING ON THE RAMAN-SPECTRUM OF INP AND GAAS [J]. APPLIED SURFACE SCIENCE, 1981, 9 (1-4) : 2 - 13

[2] EFFECT OF UNIAXIAL STRESS AND DOPING ON ONE-PHONON RAMAN-SPECTRUM OF GAP [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1974, 61 (01): : 207 - 213

[3] THE PREPARATION OF DEVICE QUALITY GALLIUM-PHOSPHIDE BY METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION [J]. JOURNAL OF CRYSTAL GROWTH, 1982, 56 (02) : 382 - 388

[4] BRODSKY MH, 1975, LIGHT SCATTERING SOL, P208

[5] STRESS-INDUCED SHIFTS OF FIRST-ORDER RAMAN FREQUENCIES OF DIAMOND AND ZINC-BLENDE-TYPE SEMICONDUCTORS [J]. PHYSICAL REVIEW B-SOLID STATE, 1972, 5 (02): : 580 - +

[6] SENSITIVE TECHNIQUE FOR STUDYING ION-IMPLANTATION DAMAGE [J]. APPLIED PHYSICS LETTERS, 1971, 18 (12) : 581 - &

[7] EERNISSE EP, 1971, SCRR710424 SAND LAB

[8] EERNISSE EP, 1971, 2ND INT C ION IMPL S, P17

[9] OBSERVATIONS OF PHONON LINE BROADENING IN III-V SEMICONDUCTORS BY SURFACE REFLECTION RAMAN-SCATTERING [J]. PHYSICAL REVIEW B, 1974, 9 (04): : 1638 - 1645

[10] Hon D. T., 1973, Applied Physics, V1, P241, DOI 10.1007/BF00889771

[1] EFFECTS OF IMPLANTATION AND ANNEALING ON THE RAMAN-SPECTRUM OF INP AND GAAS [J]. APPLIED SURFACE SCIENCE, 1981, 9 (1-4) : 2 - 13

[2] EFFECT OF UNIAXIAL STRESS AND DOPING ON ONE-PHONON RAMAN-SPECTRUM OF GAP [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1974, 61 (01): : 207 - 213

[3] THE PREPARATION OF DEVICE QUALITY GALLIUM-PHOSPHIDE BY METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION [J]. JOURNAL OF CRYSTAL GROWTH, 1982, 56 (02) : 382 - 388

[4] BRODSKY MH, 1975, LIGHT SCATTERING SOL, P208

[5] STRESS-INDUCED SHIFTS OF FIRST-ORDER RAMAN FREQUENCIES OF DIAMOND AND ZINC-BLENDE-TYPE SEMICONDUCTORS [J]. PHYSICAL REVIEW B-SOLID STATE, 1972, 5 (02): : 580 - +

[6] SENSITIVE TECHNIQUE FOR STUDYING ION-IMPLANTATION DAMAGE [J]. APPLIED PHYSICS LETTERS, 1971, 18 (12) : 581 - &

[7] EERNISSE EP, 1971, SCRR710424 SAND LAB

[8] EERNISSE EP, 1971, 2ND INT C ION IMPL S, P17

[9] OBSERVATIONS OF PHONON LINE BROADENING IN III-V SEMICONDUCTORS BY SURFACE REFLECTION RAMAN-SCATTERING [J]. PHYSICAL REVIEW B, 1974, 9 (04): : 1638 - 1645

[10] Hon D. T., 1973, Applied Physics, V1, P241, DOI 10.1007/BF00889771