HETEROEPITAXY OF GE-76 FILMS ON GAAS BY DIRECT DEPOSITION FROM A LOW-ENERGY ION-BEAM

被引：7

作者：

HAYNES, TE

ZUHR, RA

PENNYCOOK, SJ

LARSON, BC

APPLETON, BR

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1989年 / 7卷 / 03期

关键词：

D O I：

10.1116/1.576288

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：1372 / 1377

页数：6

共 25 条

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