FORMATION OF SILICON REENTRANT CAVITY HEAT SINKS USING ANISOTROPIC ETCHING AND DIRECT WAFER BONDING

被引：20

作者：

GOYAL, A ^{[1
]}

JAEGER, RC ^{[1
]}

BHAVNANI, SH ^{[1
]}

ELLIS, CD ^{[1
]}

PHADKE, NK ^{[1
]}

AZIMIRASHTI, M ^{[1
]}

GOODLING, JS ^{[1
]}

机构：

[1] AUBURN UNIV, ALABAMA MICROELECTR SCI & TECHNOL CTR, DEPT MECH ENGN, AUBURN, AL 36849 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 1993年 / 14卷 / 01期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1109/55.215090

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel silicon reentrant cavity heat sink for enhanced liquid cooling of silicon multichip substances has been fabricated using a two-step anisotropic etching process followed by silicon direct wafer bonding. Cavity mouth openings ranging from 8 to 500 mum have been batch fabricated with the two-step process. The reentrant cavities suppress the temperature overshoot normally associated with the transition between the free convection and nucleate boiling regimes of liquid immersion cooling. Nucleate boiling has been observed to occur at heater fluxes below 2 W/cm2 for both increasing and decreasing heat flux conditions. Specific thermal contact resistances (heater fluid) of less than 0.6 K . cm2/W have been measured in Freon-22, R-113, and FC-72.

引用

页码：29 / 32

页数：4

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