RATIONAL FORMALISM OF THE RESIDUAL-STRESS DETERMINATION METHOD BY X-RAY-DIFFRACTION - APPLICATION ON THIN-FILMS AND MULTILAYERS

被引:21
作者
BADAWI, KF [1 ]
KAHLOUN, C [1 ]
GRILHE, J [1 ]
机构
[1] LPMTM,F-93430 VILLETANEUSE,FRANCE
来源
JOURNAL DE PHYSIQUE III | 1993年 / 3卷 / 06期
关键词
D O I
10.1051/jp3:1993108
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The use of the rational formalism in the residual stress determination method by X-ray diffraction improves the precision and the mathematical elegance of this method. It eliminates the approximations made in the conventional formalism, and corrects the results by more than 15 % in certain case of thin films and multilayers.
引用
收藏
页码:1183 / 1188
页数:6
相关论文
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