RESIDUAL-STRESS DETERMINATION IN A 1000 A TUNGSTEN THIN-FILMS BY X-RAY-DIFFRACTION

In this study, we have determined the complete residual stress tensor by X-rays diffraction, using the sin2 psi method, in a 1 000 angstrom tungsten thin film deposited on a silicon monocrystal. Stresses are tension wise of big magnitude (1.5 GPa). They are almost isotropic in the film plane. Shear stresses are low but not negligeable. After a bombardment by a 320 keV Xe++ ion beam, the stresses became compressive (about - 1.3 GPa). These results demonstrate the feasability of stress determination by the sin2 psi method in films as thin as 1 000 angstrom and open interesting areas for futur research.