SINGLE-CRYSTAL TITANIUM CARBIDE, EPITAXIALLY GROWN ON ZINCBLEND AND WURTZITE STRUCTURES OF SILICON-CARBIDE

被引：17

作者：

ZHAO, QH ^{[1
]}

PARSONS, JD ^{[1
]}

CHEN, HS ^{[1
]}

CHADDHA, AK ^{[1
]}

WU, J ^{[1
]}

KRUAVAL, GB ^{[1
]}

DOWNHAM, D ^{[1
]}

机构：

[1] OREGON GRAD INST SCI & TECHNOL,DEPT ELECT ENGN & APPL PHYS,PORTLAND,OR 97291

来源：

MATERIALS RESEARCH BULLETIN | 1995年 / 30卷 / 06期

关键词：

TITANIUM CARBIDE; SILICON CARBIDE; METAL SEMICONDUCTOR INTERFACES;

D O I：

10.1016/0025-5408(95)00056-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Conditions for TiC epitaxial growth on 6H alpha-SiC and beta-SiC surfaces were established. The TiC epilayer defect structures and TiC/SiC interface properties were investigated in TiC/(0001)-6H alpha-Sic, TiC/(111)-beta-SiC and TiC/(110)-beta-SiC structures. The TiC/SiC interfaces - annealed at 1300-1400 degrees C - remained flat and free of titanium silicides. Threading dislocations were the only defects observed in TiC epilayers grown on (0001) 6H alpha-SiC. Microtwins and DPBs formed in TiC epilayers grown on (110) beta-SIC were propagated only from similar defects present in the substrate.

引用

页码：761 / 769

页数：9

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