ON REMOVAL OF DISLOCATIONS IN CRYSTALS GROWN BY TRAVELLING SOLVENT METHOD

被引:12
作者
WOLFF, GA
DAS, BN
机构
关键词
D O I
10.1149/1.2423941
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:299 / &
相关论文
共 10 条
[1]   DYNAMICAL DIFFRACTION OF X RAYS BY PERFECT CRYSTALS [J].
BATTERMAN, BW ;
COLE, H .
REVIEWS OF MODERN PHYSICS, 1964, 36 (03) :681-&
[2]  
Borrmann G, 1941, PHYS Z, V42, P157
[3]  
DIBENEDETTO B, UNPUBLISHED WORK
[4]   DIRECT OBSERVATION OF DISLOCATIONS IN SILICON SINGLE CRYSTALS USING A WHITE X-RAY RADIATION TECHNIQUE [J].
FIERMANS, L .
PHYSICA STATUS SOLIDI, 1964, 6 (01) :169-172
[5]  
FUJIWARA T, 1964, JPN J APPL PHYS, V3, P129
[6]  
GRIFFITHS LB, TO BE PUBLISHED
[7]   DISLOCATIONS IN THE DIAMOND LATTICE [J].
HORNSTRA, J .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1958, 5 (1-2) :129-141
[8]   CRYSTAL GROWTH OF GAAS FROM GA BY A TRAVELING SOLVENT METHOD [J].
MLAVSKY, AI ;
WEINSTEIN, M .
JOURNAL OF APPLIED PHYSICS, 1963, 34 (09) :2885-&
[9]  
WEINSTEIN M, IN PRESS
[10]  
WOLFF GA, 1965, JUN P INT C ADS CRYS, P711