EFFECT OF DEEP LEVELS ON SEMICONDUCTOR CARRIER CONCENTRATIONS IN THE CASE OF STRONG COMPENSATION

被引：36

作者：

NEUMARK, GF

机构：

来源：

PHYSICAL REVIEW B | 1982年 / 26卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.26.2250

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：2250 / 2252

页数：3

共 12 条

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[10]

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