共 35 条
- [1] ROLE OF SURFACE ANTISITE DEFECTS IN THE FORMATION OF SCHOTTKY BARRIERS [J]. PHYSICAL REVIEW B, 1982, 25 (02): : 1423 - 1426
- [3] GAAS(100) - ITS SPECTRUM, EFFECTIVE CHARGE, AND RECONSTRUCTION PATTERNS [J]. PHYSICAL REVIEW B, 1976, 14 (04): : 1623 - 1632
- [4] IDEAL AL-GE(001) INTERFACE - FROM CHEMISORPTION TO METALLIZATION OF THE AL OVERLAYER [J]. PHYSICAL REVIEW B, 1984, 29 (12): : 6419 - 6424
- [5] ABRUPTNESS OF SEMICONDUCTOR-METAL INTERFACES [J]. PHYSICAL REVIEW LETTERS, 1981, 46 (13) : 838 - 841
- [7] SURFACE-STATES IN (111) AND (111) FACES OF ZINCBLENDE COMPOUNDS [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1978, 88 (02): : 591 - 597
- [8] SCHOTTKY-BARRIER FORMATION .1. ABRUPT METAL-SEMICONDUCTOR JUNCTIONS [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1983, 16 (33): : 6499 - 6512
- [10] HARRISON WA, 1979, PHYS REV B, V20, P2420