EFFECTS ON CHANNELING OF RADIATION-DAMAGE DUE TO 28 GEV PROTONS

被引：20

作者：

BAKER, SI

CARRIGAN, RA

CUPPS, VR

FORSTER, JS

GIBSON, WM

SUN, CR

机构：

[1] FERMILAB NATL ACCELERATOR LAB,BATAVIA,IL 60510

[2] SUPERCOND SUPER COLLIDER LAB,DALLAS,TX 75237

[3] AECL RES,CHALK RIVER LABS,CHALK RIVER K0J 1J0,ON,CANADA

[4] SUNY ALBANY,ALBANY,NY 12222

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1994年 / 90卷 / 1-4期

关键词：

D O I：

10.1016/0168-583X(94)95525-5

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

For an irradiation of 2.9 x 10(19) protons at a beam energy of 28 GeV, the channeling minimum yield in a silicon single crystal increased from 2.3% to 4.1%. The radiation damage occurred with a proton fluence of (4.1 +/- 1.4) x 10(20)/cm2. The degradation was measured with MeV-range He ions using Rutherford backscattering. The relevance to bent crystal extraction of TeV beams is discussed.

引用

页码：119 / 123

页数：5

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