SOME ASPECTS OF HOT-ELECTRON AGING IN MOSFETS

被引：12

作者：

RADOJCIC, R

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1984年 / 31卷 / 10期

关键词：

D O I：

10.1109/T-ED.1984.21720

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1381 / 1386

页数：6

共 30 条

[1]

Abbas S. A., 1976, 14th Annual Proceedings Reliability Physics, P38, DOI 10.1109/IRPS.1976.362719

[2]

Abbas S. A., 1976, 14th Annual Proceedings Reliability Physics, P18, DOI 10.1109/IRPS.1976.362716

[3] HOT-CARRIER INSTABILITY IN IGFETS [J].

ABBAS, SA ;

DOCKERTY, RC .

APPLIED PHYSICS LETTERS, 1975, 27 (03) :147-148

[4] HOT-ELECTRON EMISSION IN N-CHANNEL IGFETS [J].

COTTRELL, PE ;

TROUTMAN, RR ;

NING, TH .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) :520-533

[5]

DiMaria D.J., 1978, PHYS SIO2 ITS INTERF, P160, DOI [10.1016/B978-0-08-023049-8.50034-8, DOI 10.1016/B978-0-08-023049-8.50034-8]

[6] TESTING FOR MOS IC FAILURE MODES [J].

EDWARDS, DG .

IEEE TRANSACTIONS ON RELIABILITY, 1982, 31 (01) :9-18

[7]

HSU FC, 1982, IEEE T ELECTRON DEV, V29, P1735

[8]

HSU FC, 1982, DEC IEDM SAN FRANC, P282

[9] THE EFFECT OF GATE BIAS ON HOT-ELECTRON TRAPPING [J].

MATSUMOTO, H ;

SAWADA, K ;

ASAI, S ;

HIRAYAMA, M ;

NAGASAWA, K .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (10) :L574-L576

[10]

MATSUMOTO H, 1981, IEEE T ELECTRON DEV, V28, P923, DOI 10.1109/T-ED.1981.20460

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