PARAMETER EXTRACTION FROM SPACEBORNE MOSFETS

[1] BUEHLER MG, 1985, UNPUB PRODUCT ASSURA

[2] THE EFFECTS OF TEST CONDITIONS ON MOS RADIATION-HARDNESS RESULTS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1981, 28 (06) : 4281 - 4287

[3] A SIMPLE-MODEL FOR SEPARATING INTERFACE AND OXIDE CHARGE EFFECTS IN MOS DEVICE CHARACTERISTICS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1984, 31 (06) : 1497 - 1501

[4] AN ANOMALOUS INCREASE OF THRESHOLD VOLTAGES WITH SHORTENING THE CHANNEL LENGTHS FOR DEEPLY BORON-IMPLANTED N-CHANNEL MOSFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (09) : 1101 - 1103

[5] MODELING TOTAL DOSE EFFECTS IN NARROW-CHANNEL DEVICES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (09) : 1159 - 1164

[6] OPTIMUM P-CHANNEL ISOLATION STRUCTURE FOR CMOS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (12) : 1823 - 1829

[7] SZE SM, 1981, PHYSICS SEMICONDUCTO

[8] VLADINIRESCU A, 1980, UCBERL M807 U CAL EL

[9] YAU LD, 1974, SOLID STATE ELECTRON, V17, P1059, DOI 10.1016/0038-1101(74)90145-2

[1] BUEHLER MG, 1985, UNPUB PRODUCT ASSURA

[2] THE EFFECTS OF TEST CONDITIONS ON MOS RADIATION-HARDNESS RESULTS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1981, 28 (06) : 4281 - 4287

[3] A SIMPLE-MODEL FOR SEPARATING INTERFACE AND OXIDE CHARGE EFFECTS IN MOS DEVICE CHARACTERISTICS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1984, 31 (06) : 1497 - 1501

[4] AN ANOMALOUS INCREASE OF THRESHOLD VOLTAGES WITH SHORTENING THE CHANNEL LENGTHS FOR DEEPLY BORON-IMPLANTED N-CHANNEL MOSFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (09) : 1101 - 1103

[5] MODELING TOTAL DOSE EFFECTS IN NARROW-CHANNEL DEVICES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (09) : 1159 - 1164

[6] OPTIMUM P-CHANNEL ISOLATION STRUCTURE FOR CMOS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (12) : 1823 - 1829

[7] SZE SM, 1981, PHYSICS SEMICONDUCTO

[8] VLADINIRESCU A, 1980, UCBERL M807 U CAL EL

[9] YAU LD, 1974, SOLID STATE ELECTRON, V17, P1059, DOI 10.1016/0038-1101(74)90145-2