AN ANOMALOUS INCREASE OF THRESHOLD VOLTAGES WITH SHORTENING THE CHANNEL LENGTHS FOR DEEPLY BORON-IMPLANTED N-CHANNEL MOSFETS

被引：22

作者：

NISHIDA, M

ONODERA, H

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1981年 / 28卷 / 09期

关键词：

D O I：

10.1109/T-ED.1981.20494

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：1101 / 1103

页数：3

相关论文

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