THRESHOLD VOLTAGE CHARACTERISTICS OF DOUBLE-BORON-IMPLANTED ENHANCEMENT-MODE MOSFETS

被引：13

作者：

WANG, PP ^{[1
]}

SPENCER, OS ^{[1
]}

机构：

[1] IBM CORP,SEMICOND DEV DEPT,SYST COMMUN DIV LAB,KINGSTON,NY 12401

来源：

关键词：

D O I：

10.1147/rd.196.0530

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

引用

页码：530 / 538

页数：9

共 19 条

[1] BARRON MB, 1969, 55011 STANF EL LAB R
[2] Christie K. H., 1973, 1973 International Electron Devices Meeting Technical Digest, P464, DOI 10.1109/IEDM.1973.188760
[3] DEARNALEY G, 1973, ION IMPLANTATION, P39
[4] DESIGN OF ION-IMPLANTED MOSFETS WITH VERY SMALL PHYSICAL DIMENSIONS
DENNARD, RH
GAENSSLEN, FH
YU, HN
RIDEOUT, VL
BASSOUS, E
LEBLANC, AR
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1974, SC 9 (05) : 256 - 268
[5] THRESHOLD VOLTAGE OF NONUNIFORMLY DOPED MOS STRUCTURES
DOUCET, G
VANDEWIE.F
[J]. SOLID-STATE ELECTRONICS, 1973, 16 (03) : 417 - 423
[6] ION IMPLANTATION IN SEMICONDUCTORS .I. RANGE DISTRIBUTION THEORY AND EXPERIMENTS
GIBBONS, JF
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (03): : 295 - +
[7] Johnson W. S., 1974, 1974 International Electron Devices Meeting (IEDM), P550, DOI 10.1109/IEDM.1974.6219809
[8] THRESHOLD VOLTAGE AND GAIN TERM BETA OF ION-IMPLANTED ENHANCEMENT-MODE N-CHANNEL MOS-TRANSISTORS
KAMOSHID.M
[J]. APPLIED PHYSICS LETTERS, 1973, 22 (08) : 404 - 405
[9] ELECTRICAL CHARACTERISTICS OF BORON-IMPLANTED N-CHANNEL MOS-TRANSISTORS
KAMOSHIDA, M
[J]. SOLID-STATE ELECTRONICS, 1974, 17 (06) : 621 - 626
[10] STEADY-STATE MATHEMATICAL THEORY FOR INSULATED GATE FIELD-EFFECT TRANSISTOR
KENNEDY, DP
MURLEY, PC
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1973, 17 (01) : 1 - 12