PHYSICAL EFFECTS IN SMALL GEOMETRY MOS-TRANSISTORS

[1] DESIGN OF ION-IMPLANTED MOSFETS WITH VERY SMALL PHYSICAL DIMENSIONS [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1974, SC 9 (05) : 256 - 268

[2] SUN E, 1978, BREAKDOWN MECHANISM

[3] SUN E, 1978, SIMPLE SHORT CHANNEL

[4] SUN E, 1978, NOV AS CIRC C

[5] TROUTMAN RR, 1979, IEEE T ELECTRON DEV, V26

[6] YAU LD, 1974, SOLID STATE ELECTRON, V17, P1059, DOI 10.1016/0038-1101(74)90145-2

[1] DESIGN OF ION-IMPLANTED MOSFETS WITH VERY SMALL PHYSICAL DIMENSIONS [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1974, SC 9 (05) : 256 - 268

[2] SUN E, 1978, BREAKDOWN MECHANISM

[3] SUN E, 1978, SIMPLE SHORT CHANNEL

[4] SUN E, 1978, NOV AS CIRC C

[5] TROUTMAN RR, 1979, IEEE T ELECTRON DEV, V26

[6] YAU LD, 1974, SOLID STATE ELECTRON, V17, P1059, DOI 10.1016/0038-1101(74)90145-2