KELVIN PROBE FORCE MICROSCOPY

被引：1902

作者：

NONNENMACHER, M

OBOYLE, MP

WICKRAMASINGHE, HK

机构：

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 25期

关键词：

D O I：

10.1063/1.105227

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Measurements of the contact potential difference between different materials have been performed for the first time using scanning force microscopy. The instrument has a high resolution for both the contact potential difference (better than 0.1 mV) and the lateral dimension ( < 50 nm) and allows the simultaneous imaging of topography and contact potential difference. Images of gold, platinum, and palladium surfaces, taken in air, show a large contrast in the contact potential difference and demonstrate the basic concept.

引用

页码：2921 / 2923

页数：3

共 16 条

[11] DEPOSITION AND IMAGING OF LOCALIZED CHARGE ON INSULATOR SURFACES USING A FORCE MICROSCOPE
STERN, JE
TERRIS, BD
MAMIN, HJ
RUGAR, D
[J]. APPLIED PHYSICS LETTERS, 1988, 53 (26) : 2717 - 2719
[12] AN ANALYTICAL REFLECTION AND EMISSION UHV SURFACE ELECTRON-MICROSCOPE
TELIEPS, W
BAUER, E
[J]. ULTRAMICROSCOPY, 1985, 17 (01) : 57 - 65
[13] SEMICONDUCTOR CHARACTERIZATION BY SCANNING FORCE MICROSCOPE SURFACE PHOTOVOLTAGE MICROSCOPY
WEAVER, JMR
WICKRAMASINGHE, HK
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (03): : 1562 - 1565
[14] HIGH-RESOLUTION ATOMIC FORCE MICROSCOPY POTENTIOMETRY
WEAVER, JMR
ABRAHAM, DW
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (03): : 1559 - 1561
[15] MICROMACHINED SILICON SENSORS FOR SCANNING FORCE MICROSCOPY
WOLTER, O
BAYER, T
GRESCHNER, J
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (02): : 1353 - 1357
[16] 1982, AM I PHYSICS HDB

← 1 2 →