NITROGEN IMPLANTATION FOR MOLECULAR-BEAM DEPOSITED CUINSE2 THIN-FILMS

We have implanted N+ ions at an accelerating voltage of 10 kV and a dose of 5 x 10(17) ions cm-2 in molecular beam deposited stoichiometric CuInSe2 thin films at various substrate temperatures (380, 515, 600, and 720 K). The conduction type of the films changed from n to p type when the substrate temperature was below 515 K during implantation. The conduction type was n type when the film temperature during implantation was above 600 K. The resistivity measured at 300 K was 1.07 x 10(4), 0.417, 0.653, 160, and 121-OMEGA cm for the films before implantation, implanted at 380, 515, 600, and 720 K, respectively. Both the conduction type and the resistivity of the films could be changed by N+ doping. Fabrication of homojunction diodes may be achieved in n-type CuInSe2 films by using the low energy nitrogen ion implantation.