DEGENERATE ELECTRON-GAS EFFECTS IN THE MODULATION SPECTROSCOPY OF PSEUDOMORPHIC AL0.32GA0.68AS/IN0.15GA0.85AS/GAAS HIGH-ELECTRON-MOBILITY TRANSISTOR STRUCTURES

被引：31

作者：

DIMOULAS, A

ZEKENTES, K

ANDROULIDAKI, M

KORNELIOS, N

MICHELAKIS, C

HATZOPOULOS, Z

机构：

[1] UNIV GRONINGEN,CTR MAT SCI,9747 AG GRONINGEN,NETHERLANDS

[2] FDN RES & TECHNOL HELLAS,GR-71110 IRAKLION,GREECE

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 10期

关键词：

D O I：

10.1063/1.109695

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effects of a degenerate two-dimensional electron gas on the interband optical excitations, occurring in the active channel of Al0.32Ga0.68As/In0.15Ga0.85As/GaAs high electron mobility transistor structures, were investigated by using phototransmittance spectroscopy. The ground state transition at room temperature exhibited a characteristic steplike line shape, which was considered to be an effect of the screening of excitons by the degenerate electron gas. A line shape fitting by using a first derivative of the absorption coefficient with respect to the electron sheet concentration n(s), allowed an estimation of the latter quantity by phototransmittance. An observed temperature-sensitive excitonlike signal, associated with the second electron subband was attributed to the modulation of the many-body correlation-enhanced excitonic absorption, known as the Fermi-edge singularity.

引用

页码：1417 / 1419

页数：3

共 20 条

[1] MODULATION SPECTROSCOPY AS A TOOL FOR ELECTRONIC MATERIAL CHARACTERIZATION [J].