PHOTOLUMINESCENCE CHARACTERIZATION OF GATED PSEUDOMORPHIC ALGAAS/INGAAS/GAAS MODULATION-DOPED FIELD-EFFECT TRANSISTORS

Electric field effects on gated pseudomorphic A]GaAs/InGaAs/GaAs quantum wells, where the Fermi level is modulated with a reverse gate voltage, are studied by low-temperature photoluminescence. A fit of the measured transition energies, with a self-consistent solution of the coupled Schrodinger-Poisson equations, gives the Fermi energy and the sheet carrier density. The absolute and relative intensities, from the first and second electron subbands to the first-hole subband transitions, are analyzed as a function of the carrier density and the Fermi level position. A very good agreement is found between data and calculations. No photoluminescence intensity enhancement, assigned to the Fermi-energy-edge singularity effects, has been observed.