DIAMOND-LIKE CARBON THIN-FILM DEPOSITION USING A MAGNETICALLY CONFINED RF PECVD SYSTEM

被引：27

作者：

SILVA, SRP

CLAY, KJ

SPEAKMAN, SP

AMARATUNGA, GAJ

机构：

[1] Engineering Department, Cambridge University, Cambridge, CB2 1PZ, Trumpington Street

来源：

关键词：

DOPING; DIAMOND-LIKE CARBON; ELECTRICAL PROPERTIES; AMORPHOUS HYDROGENATED CARBON;

D O I：

10.1016/0925-9635(94)00266-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Diamond-like carbon thin films have been deposited at low temperatures, using local magnetic confinement in a r.f.-powered plasma-enhanced chemical vapour deposition process. The increased plasma density and temperature obtained by magnetically confining the plasma, increases the ionization of the hydrocarbon gas in the deposition chamber. The modified plasma is characterized together with the material properties of the deposited films. A model is proposed to explain the dissociation of species in the plasma and the plasma temperature based on the observed results. Doping of the films using nitrogen gas fed in with the hydrocarbon is also investigated.

引用

页码：977 / 983

页数：7

共 9 条

[1] ION-BEAM DEPOSITION OF THIN FILMS OF DIAMONDLIKE CARBON [J].

AISENBERG, S ;

CHABOT, R .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (07) :2953-+

[2]

KALISH R, 1991, APPL PHYS A-MATER, V52, P48

[3]

PAULING L, 1960, NATURE CHEM BOND, P57

[4] USE OF SPACE-CHARGE-LIMITED CURRENT TO EVALUATE THE ELECTRONIC DENSITY-OF-STATES IN DIAMOND-LIKE CARBON THIN-FILMS [J].

SILVA, SRP ;

AMARATUNGA, GAJ .

THIN SOLID FILMS, 1994, 253 (1-2) :146-150

[5] OPTICAL-PROPERTIES OF AMORPHOUS C/DIAMOND THIN-FILMS [J].

SILVA, SRP ;

AMARATUNGA, GAJ ;

CONSTANTINOU, CP .

JOURNAL OF APPLIED PHYSICS, 1992, 72 (03) :1149-1153

[6]

SILVA SRP, IN PRESS

[7] THE EFFECT OF NITROGENATION ON THE ELECTRICAL-PROPERTIES OF AMORPHOUS HYDROGENATED CARBON LAYERS [J].

STENZEL, O ;

VOGEL, M ;

PONITZ, S ;

PETRICH, R ;

WALLENDORF, T ;

VONBORCZYSKOWSKI, C ;

ROZPLOCH, F ;

KRASILNIK, Z ;

KALUGIN, N .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1993, 140 (01) :179-188

[8]

SUGAI H, 1991, 1991 P INT SEM REACT, P381

[9]

VEERASAMY VS, IN PRESS IEEE T ELEC

← 1 →