USE OF SPACE-CHARGE-LIMITED CURRENT TO EVALUATE THE ELECTRONIC DENSITY-OF-STATES IN DIAMOND-LIKE CARBON THIN-FILMS

被引：35

作者：

SILVA, SRP

AMARATUNGA, GAJ

机构：

[1] Engineering Department, University of Cambridge, Cambridge, Cambs. CB2 1PZ, Trumpington Street

来源：

THIN SOLID FILMS | 1994年 / 253卷 / 1-2期

关键词：

AMORPHOUS MATERIALS; CARBON; CHEMICAL VAPOR DEPOSITION; ELECTRICAL PROPERTIES AND MEASUREMENTS;

D O I：

10.1016/0040-6090(94)90310-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Diamond-like carbon thin films are characterized using the space-charge limited current (SCLC) under electron and hole injection. An electronic density of states diagram derived using SCLC shows similarities to the Davies-Mott model, with localized states within the midgap region and band tailing at the edges of the gap. The density of midgap states for diamond-like carbon is of the order of 10(18) cm(-3) eV(-1) and increases to 10(21) cm(-3) eV(-1) at the localized states associated with the pi-pi* bands. Activation energy and SCLC analysis show a defect state density of the order of 10(19) cm(-3) eV(-1) close to the centre of the band gap.

引用

页码：146 / 150

页数：5

共 14 条

[1]

AMARATUNGA G, 1990, IEEE ELECTRON DEVICE, V11, P39

[2] SIMPLE BAND MODEL FOR AMORPHOUS SEMICONDUCTING ALLOYS [J].