THEORY OF BAND LINEUPS IN AMORPHOUS-SEMICONDUCTOR HETEROJUNCTIONS

被引:11
作者
ROBERTSON, J
机构
关键词
D O I
10.1016/0022-3093(87)90207-9
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
引用
收藏
页码:863 / 866
页数:4
相关论文
共 17 条
[1]   EXPERIMENTS ON GE-GAAS HETEROJUNCTIONS [J].
ANDERSON, RL .
SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) :341-&
[2]  
Distefano T.H., 1978, PHYSICS SIO2 ITS INT, P362
[3]   PHOTOEMISSION-STUDIES OF AMORPHOUS-SEMICONDUCTOR HETEROJUNCTIONS [J].
EVANGELISTI, F .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 :969-977
[4]   TIGHT-BINDING THEORY OF HETEROJUNCTION BAND LINEUPS AND INTERFACE DIPOLES [J].
HARRISON, WA ;
TERSOFF, J .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (04) :1068-1073
[5]   THEORY OF BAND LINE-UPS [J].
HARRISON, WA .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04) :1231-1238
[6]   ELECTRONIC-STRUCTURE OF SILICON-NITRIDE AND AMORPHOUS-SILICON SILICON-NITRIDE BAND OFFSETS BY ELECTRON-SPECTROSCOPY [J].
IQBAL, A ;
JACKSON, WB ;
TSAI, CC ;
ALLEN, JW ;
BATES, CW .
JOURNAL OF APPLIED PHYSICS, 1987, 61 (08) :2947-2954
[7]  
KATANI AD, 1983, J APP PHYS, V54, P2522
[8]   ELECTRONIC-STRUCTURE AND OPTICAL-PROPERTIES OF 3C-SIC [J].
LUBINSKY, AR ;
ELLIS, DE ;
PAINTER, GS .
PHYSICAL REVIEW B, 1975, 11 (04) :1537-1546
[9]   ENERGY-BAND DISCONTINUITIES IN A HETEROJUNCTION OF AMORPHOUS HYDROGENATED SI AND CRYSTALLINE SI MEASURED BY INTERNAL PHOTOEMISSION [J].
MIMURA, H ;
HATANAKA, Y .
APPLIED PHYSICS LETTERS, 1987, 50 (06) :326-328
[10]   THEORY OF DEFECTS IN VITREOUS SILICON DIOXIDE [J].
OREILLY, EP ;
ROBERTSON, J .
PHYSICAL REVIEW B, 1983, 27 (06) :3780-3795