ELECTRONIC-STRUCTURE OF SILICON-NITRIDE AND AMORPHOUS-SILICON SILICON-NITRIDE BAND OFFSETS BY ELECTRON-SPECTROSCOPY

被引：86

作者：

IQBAL, A

JACKSON, WB

TSAI, CC

ALLEN, JW

BATES, CW

机构：

[1] STANFORD UNIV, DEPT ELECT ENGN, STANFORD, CA 94305 USA

[2] XEROX CORP, PALO ALTO RES CTR, PALO ALTO, CA 94304 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 61卷 / 08期

关键词：

D O I：

10.1063/1.337842

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2947 / 2954

页数：8

共 31 条

[1] AMORPHOUS-SEMICONDUCTOR SUPER-LATTICES [J].

ABELES, B ;

TIEDJE, T .

PHYSICAL REVIEW LETTERS, 1983, 51 (21) :2003-2006

[2]

ABELES B, 1984, AIP CONF PROC, P394, DOI 10.1063/1.34769

[3]

AMER NM, 1984, SEMICONDUCT SEMIMET, V21, P83

[4] VALENCE-BAND ELECTRONIC-STRUCTURE OF SILICON-NITRIDE STUDIED WITH THE USE OF SOFT-X-RAY EMISSION [J].

CARSON, RD ;

SCHNATTERLY, SE .

PHYSICAL REVIEW B, 1986, 33 (04) :2432-2438

[5] NONVOLATILE SEMICONDUCTOR MEMORY DEVICES [J].

CHANG, JJ .

PROCEEDINGS OF THE IEEE, 1976, 64 (07) :1039-1059

[6]

COLEMAN NV, 1968, PHYS STATUS SOLIDI, V25, P241

[7] HOLE INJECTION INTO SILICON-NITRIDE - INTERFACE BARRIER ENERGIES BY INTERNAL PHOTOEMISSION [J].

DIMARIA, DJ ;

ARNETT, PC .

APPLIED PHYSICS LETTERS, 1975, 26 (12) :711-713

[8]

GHANDHI SK, 1983, VLSI FABRICATION PRI, P427

[9] PHOTOEMISSION OF ELECTRONS AND HOLES INTO SILICON NITRIDE [J].

GOODMAN, AM .

APPLIED PHYSICS LETTERS, 1968, 13 (08) :275-&

[10] METASTABLE DEFECTS IN AMORPHOUS-SILICON THIN-FILM TRANSISTORS [J].

HEPBURN, AR ;

MARSHALL, JM ;

MAIN, C ;

POWELL, MJ ;

VANBERKEL, C .

PHYSICAL REVIEW LETTERS, 1986, 56 (20) :2215-2218

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